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savantic semiconductor product specification silicon npn power transistors 2SC2682 d escription with to-126 package complement to type 2sa1142 applications audio frequency power amplifier; high frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 180 v v ceo collector- emitter voltage open base 180 v v ebo emitter-base voltage open collector 5 v i c collector current 0.1 a t a =25 1.2 p c collector power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC2682 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =50ma; i b =5ma 0.12 0.5 v v besat base-emitter saturation voltage i c =50ma; i b =5ma 0.8 1.5 v i cbo collector cut-off current v cb =180v; i e =0 1 a i ebo emitter cut-off current v eb =3v; i c =0 1 a h fe-1 dc current gain i c =1ma ; v ce =5v 90 190 h fe-2 dc current gain i c =10ma ; v ce =5v 100 200 320 f t transition frequency i c =20ma ; v ce =10v 200 mhz c ob output capacitance i e =0 ; v cb =10v;f=1mhz 3.2 pf h fe-2 classifications q p 100-200 160-320
savantic semiconductor product specification 3 silicon npn power transistors 2SC2682 package outline fig.2 outline dimensions

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